APA
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Jadhav, A., Ozawa, T., Baratov, A., Asubar, J., Kuzuhara, M., Wakejima, A., … Sarkar, B. (2022). An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources. IEEE Journal of the Electron Devices Society.
Chicago/Turabian
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Jadhav, Aakash, T. Ozawa, A. Baratov, J. Asubar, M. Kuzuhara, A. Wakejima, Shunpei Yamashita, et al. “An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources.” IEEE Journal of the Electron Devices Society (2022).
MLA
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Jadhav, Aakash, et al. “An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources.” IEEE Journal of the Electron Devices Society, 2022.
BibTeX Click to copy
@article{aakash2022a,
title = {An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources},
year = {2022},
journal = {IEEE Journal of the Electron Devices Society},
author = {Jadhav, Aakash and Ozawa, T. and Baratov, A. and Asubar, J. and Kuzuhara, M. and Wakejima, A. and Yamashita, Shunpei and Deki, M. and Nitta, S. and Honda, Y. and Amano, H. and Roy, Sourajeet and Sarkar, B.}
}
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of pole-residue terms. By representing each pole-residue term as a dependent current source, it is possible to develop an accurate SSC models for HEMTs which otherwise may not be possible using passive resistive-inductive-capacitive elements. The accuracy of the proposed SSC model is validated against the conventional SSC model using a 2nd, 3rd and 4th order rational function representation of the admittance branches of AlGaN/GaN HEMTs. Therefore, the proposed SSC model turns out to be highly robust in nature and can take care of any form of the transfer functions of the admittance branches between the gate, drain, and source terminal of an AlGaN/GaN HEMT.